Infineon launches next generation high-performance metal oxide semiconductor field-effect transistor CoolMOS MOSFET 2

Design more efficient, compact, lightweight,

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Infineon launches next generation high-performance metal oxide semiconductor field-effect transistor CoolMOS MOSFET 3

The CoolMOS C6 device can reduce design difficulty and is highly suitable for various energy-efficient applications,

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China's first ZnO nanorod field-effect transistor successfully developed

Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has successfully developed the first ZnO nanorod field-effect transistor in China using independently developed new technology.

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China's first ZnO nanorod field-effect transistor successfully developed

Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has successfully developed the first ZnO nanorod field-effect transistor in China using independently developed new technology.

Categories:Product knowledge Hits:361 View »

New progress has been made in the research of low-cost organic field-effect transistors

In recent years, organic field-effect transistors have attracted attention from both academia and industry due to their potential applications in large-area,

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New progress has been made in the research of low-cost organic field-effect transistors

In recent years, organic field-effect transistors have attracted attention from both academia and industry due to their potential applications in large-area,

Categories:Product knowledge Hits:334 View »

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